Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress
Key: SMK+03-1
Author: C. Sydlo, K. Mutamba, L. Divac Krnic, B. Mottet, H.L. Hartnagel
Date: July 2003
Kind: @article
Abstract: The transmission line pulse method (TLP) is used to characterise the reliability of bolometric GaAs microwave power-sensors. Two degradation mechanisms are identified during the degradation process of the absorbing NiCr termination, in which the input power is converted into heat. Simulations and a material analysis have been performed in order to characterise the observed degradation mechanisms.
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